목차/차례
2. For figure 6-3, how JFET can be controlled in terms of biasing among S, G & D
4. For figure 6-5, if you increase VG, what is the result
5. equation for ID before the pinch-off
6. equation for ID after the pinch-off
7. For figure 6-7, explain the operational principle of MEtal-Semiconductor junction FET. (how and why it can be turned on&off.
8. For figure 6-8, show how the HEMT can be constructed. (how mobility and carrier concentration can be increased)
10. For figure 6-11, Explain 3 different operating conditions in terms of ID. (show how the ID responds to each condition)
본문/내용
[물리전자2] 과제5 내용 요약 Load line부터 (6단원)
목차
1 - a. For figure 6-2, significance and purpose of load line
1 - b. For figure 6-2, purpose of VG in 6-2(a), 6-2(b)
2. For figure 6-3, how JFET can be controlled in terms of biasing among S, G & D
3 - a. For figure 6-4, what is pinch-off
3 b. For figure 6-4, how about the current ID beyond pinch-off if VD increases
4. For figure 6-5, if you increase VG, what is the result
5. equation for ID before the pinch-off
6. equation for ID after the pinch-off
7. For figure 6-7, explain the operational principle of MEtal-Semiconductor junction FET. (how and why it can be turned on&off.
8. For figure 6-8, show how the HEMT can be constructed. (how mobility and carrier concentration can be increased)
9 - a. For figure 6-10, Explain the on & off for n-type, p-type MOSFET regarding VG.
9 b. For figure 6-10, Explain the on & off states the enhancement type n-channel MOSFET in terms of the band diagram along cha…