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Semiconductor Physics and Devices: Basic Principles, 3rd edition Solutions Manual
Chapter 1 Problem Solutions
Chapter 1
Problem Solutions
1.1 (a) fcc: 8 corner atoms × 1/8 〓 1 atom 6 face atoms × ½ 〓 3 atoms Total of 4 atoms per unit cell (b) bcc: 8 corner atoms × 1/8 〓 1 atom 1 enclosed atom 〓 1 atom Total of 2 atoms per unit cell (c) Diamond: 8 corner atoms × 1/8 〓 1 atom 6 face atoms × ½ 〓 3 atoms 4 enclosed atoms 〓 4 atoms Total of 8 atoms per unit cell 1.2 (a) 4 Ga atoms per unit cell Density 〓 4 atoms per cell, so atom vol. 〓 4 Then 4 Ratio 〓
FG 4πr IJ H3K
3
16 2 r (c) Body-centered cubic lattice 4 d 〓 4r 〓 a 3 ⇒ a 〓 r 3 Unit cell vol. 〓 a 〓
3
FG 4πr IJ H 3 K × 100% ⇒
3 3
Ratio 〓 74%
F 4 rI H 3K
3
2 atoms per cell, so atom vol. 〓 2 Then
FG 4πr IJ H3K
3
b
4
?8
5.65 x10
g
3
⇒
22 ?3
Density of Ga 〓 2.22 x10 cm
22
4 As atoms per unit cell, so that Density of As 〓 2.22 x10 cm (b) 8 Ge atoms…