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BJT ½Ç½À

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BJT ½Ç½À
Simulation Using Smart-spice
Bipolar Junction Transistor
(c)
NPN Bipolar Junction Transistor
BJT
.option scale=1u post
.dc VBE 0 0.8 1m VCE 0 5 1
VCE VCE 0 DC 1
VBE VBE 0 DC 0

Q1 VCE VBE 0 0 Q2N3904

.model Q2N3904 NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=5.03 Bf=416.4
+ Ne=1.259 Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0
+ Ikr=0 Rc=0.1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p
+ Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
.let IC=-i(VCE...
º»¹®/³»¿ë
BJT ½Ç½À

Simulation Using Smart-spice

Bipolar Junction Transistor
(c)

NPN Bipolar Junction Transistor
BJT

.option scale=1u post
.dc VBE 0 0.8 1m VCE 0 5 1

VCE VCE 0 DC 1
VBE VBE 0 DC 0
Q1 VCE VBE 0 0 Q2N3904

.model Q2N3904 NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=5.03 Bf=416.4
+ Ne=1.259 Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0
+ Ikr=0 Rc=0.1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p
+ Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)

.let IC=-i(VCE)
.plot IC

.end

Gateway simulation
.dc LIN VBE 0 0.8 1m LIN VCE 0 5 1

.model Q2N3904 NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=5.03 Bf=416.4
+ Ne=1.259 Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0
+ Ikr=0 Rc=0.1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p
+ Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
NPN Bipolar Junction Transistor
BJT

.option scale=1u post
.dc VCE 0 5 1m VBE 0 5 1

VCE VCE 0 DC 5
VBE VBE 0 DC 0
Q1 VCE VBE 0 0 Q2N3904

.model Q2N390¡¦(»ý·«)



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Date : 2013-04-29
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