반도체소자 솔루션 Donald A. Neamen 이진구 공역 / Mcgraw Hill (구매자 판매중지)

Semiconductor Physics and Devices: Basic Principles, 3rd edition Solutions Manual Chapter 1 Problem Solutions Chapter 1 Problem Solutions 1.1 (a) fcc: 8 corner atoms × 1/8 = 1 atom 6 face atoms × ½ = 3 atoms Total of 4 atoms per unit cell (b) bcc: 8 corner atoms × 1/8 = 1 atom 1 enclosed atom = 1 atom Total of 2 atoms per unit cell (c) Diamond: 8 corner atoms × 1/8 = 1 atom 6 face atoms × ½ = 3 atoms 4 enclosed atoms = 4 atoms Total of 8 atoms per unit cell 1.2 (a) 4 Ga atoms per unit cell Density = 4 atoms per cell, so atom vol. = 4 Then 4 Ratio = FG 4πr IJ H3K 3 16 2 r (c) Body-centered cubic lattice 4 d = 4r = a 3 ⇒ a = r 3 Unit cell vol. = a = 3 FG 4πr IJ H 3 K × 100% ⇒ 3 3 Ratio = 74% F 4 rI H 3K 3 2 atoms per cell, so atom vol. = 2 Then FG 4πr IJ H3K 3 b 4 ?8 5.65 x10 g 3 ⇒ 22 ?3 Density of Ga = 2.22 x10 cm 22 4 As atoms per unit cell, so that Density of As = 2.22 x10 cm (b) 8 Ge atoms per unit cell 8 ⇒