반도체물성과 소자 3판 솔루션 D. Neamen

Semiconductor Physics and Devices: Basic Principles, 3rd edition Solutions Manual

Chapter 1 Problem Solutions

Chapter 1
Problem Solutions
1.1 (a) fcc: 8 corner atoms × 1/8 = 1 atom 6 face atoms × ½ = 3 atoms Total of 4 atoms per unit cell (b) bcc: 8 corner atoms × 1/8 = 1 atom 1 enclosed atom = 1 atom Total of 2 atoms per unit cell (c) Diamond: 8 corner atoms × 1/8 = 1 atom 6 face atoms × ½ = 3 atoms 4 enclosed atoms = 4 atoms Total of 8 atoms per unit cell 1.2 (a) 4 Ga atoms per unit cell Density = 4 atoms per cell, so atom vol. = 4 Then 4 Ratio =

FG 4πr IJ H3K
3

16 2 r (c) Body-centered cubic lattice 4 d = 4r = a 3 ⇒ a = r 3 Unit cell vol. = a =
3

FG 4πr IJ H 3 K × 100% ⇒
3 3

Ratio = 74%

F 4 rI H 3K

3

2 atoms per cell, so atom vol. = 2 Then

FG 4πr IJ H3K
3

b

4
?8

5.65 x10

g

3

⇒
22 ?3

Density of Ga = 2.22 x10 cm
22

4 As atoms per unit cell, so that Density of As = 2.22 x10 cm (b) 8 Ge atoms per unit cell 8 ⇒…(생략)